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In order to study defect generation and radiation-induced interface in semiconductor influenced by dose rate response and $H_2$, we provide a 3D finite element model based on Poisson-Nersnt-Planck equations to simulate the electro-diffusion process in numerical experiment. Multi-scale method is used in discretization and the restricted additive Schwarz preconditioner is applied to solve the linear system in simulation. The algorithm we establish in this work is solved by our parallel finite element software based on Parallel Hierarchical Grid with high efficiency. It is shown that the numerical results from our simulation agree well with experimental data of the devices affected by enhanced low dose-rate sensitivity in different $H_2$ environments.

defect generation, $Si-SiO_2$ interface, enhanced low dose-rate sensitivity (EDLRS), multi-scale method